Taiwan Semi TSM2311CX RFG P-channel MOSFET, 4 A, 20 V, 3-Pin SOT-23
Product Information
Dimensions:
3.1 x 1.7 x 1.2mm
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.95V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
640 pF @ -6 V
Length:
3.1mm
Pin Count:
3
Typical Turn-Off Delay Time:
70 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
900 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1.2mm
Typical Turn-On Delay Time:
35 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
85 mΩ
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Yes. We ship TSM2311CX RFG Internationally to many countries around the world.
This is Taiwan Semi P-channel MOSFET 4 A 20 V 3-Pin SOT-23 manufactured by Taiwan Semiconductor. The manufacturer part number is TSM2311CX RFG. The given dimensions of the product include 3.1 x 1.7 x 1.2mm. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.95v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 9 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 640 pf @ -6 v . Its accurate length is 3.1mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 70 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 900 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 1.2mm. In addition, it has a typical 35 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 85 mω maximum drain source resistance.
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