Vishay IRFD9110PBF P-channel MOSFET, 700 mA, 100 V, 4-Pin HVMDIP

IRFD9110PBF Vishay  P-channel MOSFET, 700 mA, 100 V, 4-Pin HVMDIP
IRFD9110PBF
Vishay

Product Information

Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
8.7 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
3.37mm
Width:
6.29mm
Length:
5mm
Minimum Gate Threshold Voltage:
2V
Package Type:
HVMDIP
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
700 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
1.2 Ω
Channel Type:
P
Maximum Operating Temperature:
+175 °C
Pin Count:
4
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 700 mA 100 V 4-Pin HVMDIP manufactured by Vishay. The manufacturer part number is IRFD9110PBF. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 8.7 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 1.3 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 3.37mm. Furthermore, the product is 6.29mm wide. Its accurate length is 5mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of hvmdip. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 700 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 1.2 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 4 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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