Fairchild FQD10N20CTM N-channel MOSFET Transistor, 7.8 A, 200 V QFET, 3-Pin DPAK
Product Information
Maximum Drain Source Voltage:
200 V
Typical Gate Charge @ Vgs:
20 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
50 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
2.3mm
Width:
6.1mm
Length:
6.6mm
Maximum Drain Source Resistance:
360 mΩ
Package Type:
DPAK
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
7.8 A
Minimum Gate Threshold Voltage:
2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is Fairchild N-channel MOSFET Transistor 7.8 A 200 V QFET 3-Pin DPAK manufactured by Fairchild Semiconductor. The manufacturer part number is FQD10N20CTM. It has a maximum of 200 v drain source voltage. With a typical gate charge at Vgs includes 20 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 50 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 2.3mm. Furthermore, the product is 6.1mm wide. Its accurate length is 6.6mm. It provides up to 360 mω maximum drain source resistance. The package is a sort of dpak. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 7.8 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins.
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