Toshiba TK39J60W5,S1VQ(O N-channel MOSFET, 39 A, 600 V TK, 3-Pin TO-3PN
Product Information
Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
135 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
270 W
Series:
TK
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
3.7V
Height:
20mm
Width:
4.5mm
Length:
15.5mm
Maximum Drain Source Resistance:
74 mΩ
Package Type:
TO-3PN
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
39 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship TK39J60W5,S1VQ(O Internationally to many countries around the world.
This is N-channel MOSFET 39 A 600 V TK 3-Pin TO-3PN manufactured by Toshiba. The manufacturer part number is TK39J60W5,S1VQ(O. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 135 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 270 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.7v of maximum gate threshold voltage. In addition, the height is 20mm. Furthermore, the product is 4.5mm wide. Its accurate length is 15.5mm. It provides up to 74 mω maximum drain source resistance. The package is a sort of to-3pn. It consists of 1 elements per chip. While 39 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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