Toshiba TK35N65W,S1F(S N-channel MOSFET, 35 A, 650 V TK, 3-Pin TO-247
Product Information
Maximum Drain Source Voltage:
650 V
Typical Gate Charge @ Vgs:
100 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
270 W
Series:
TK
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
3.5V
Height:
20.95mm
Width:
5.02mm
Length:
15.94mm
Maximum Drain Source Resistance:
80 mΩ
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
35 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship TK35N65W,S1F(S Internationally to many countries around the world.
This is N-channel MOSFET 35 A 650 V TK 3-Pin TO-247 manufactured by Toshiba. The manufacturer part number is TK35N65W,S1F(S. It has a maximum of 650 v drain source voltage. With a typical gate charge at Vgs includes 100 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 270 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.5v of maximum gate threshold voltage. In addition, the height is 20.95mm. Furthermore, the product is 5.02mm wide. Its accurate length is 15.94mm. It provides up to 80 mω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 35 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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