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This is N-channel MOSFET 10 A 800 V TK 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK10A80E,S4X(S. It has a maximum of 800 v drain source voltage. With a typical gate charge at Vgs includes 46 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 50 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 15mm. Furthermore, the product is 4.5mm wide. Its accurate length is 10mm. It provides up to 1 ω maximum drain source resistance. The package is a sort of to-220sis. It consists of 1 elements per chip. While 10 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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