Infineon IRLL024NPBF N-channel MOSFET, 4.4 A, 55 V HEXFET, 3+Tab-Pin SOT-223
Product Information
Maximum Continuous Drain Current:
4.4 A
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
2V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10.4 nC @ 5 V
Channel Type:
N
Length:
6.7mm
Pin Count:
3 + Tab
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.1 W
Series:
HEXFET
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
1.7mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
65 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship IRLL024NPBF Internationally to many countries around the world.
This is N-channel MOSFET 4.4 A 55 V HEXFET 3+Tab-Pin SOT-223 manufactured by Infineon. The manufacturer part number is IRLL024NPBF. While 4.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.7mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 10.4 nc @ 5 v. The product is available in [Cannel Type] channel. Its accurate length is 6.7mm. It contains 3 + tab pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.1 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +16 v. In addition, the height is 1.7mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 65 mω maximum drain source resistance.
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