Infineon IRFI4212H-117P Dual N-channel MOSFET, 11 A, 100 V HEXFET, 5-Pin TO-220
Product Information
Maximum Continuous Drain Current:
11 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-220
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
5
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
18 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.02mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
73 mΩ
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Yes. We ship IRFI4212H-117P Internationally to many countries around the world.
This is Dual N-channel MOSFET 11 A 100 V HEXFET 5-Pin TO-220 manufactured by Infineon. The manufacturer part number is IRFI4212H-117P. While 11 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers series transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 12 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 5 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 18 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 9.02mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 73 mω maximum drain source resistance.
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