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Infineon IRF7455PBF N-channel MOSFET, 15 A, 30 V HEXFET, 8-Pin SOIC

IRF7455PBF Infineon  N-channel MOSFET, 15 A, 30 V HEXFET, 8-Pin SOIC
IRF7455PBF
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
15 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
8 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
37 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3480 pF@ 25 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
51 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
HEXFET
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.5mm
Typical Turn-On Delay Time:
17 ns
Minimum Operating Temperature:
-55 °C
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 15 A 30 V HEXFET 8-Pin SOIC manufactured by Infineon. The manufacturer part number is IRF7455PBF. It is of power mosfet category . The given dimensions of the product include 5 x 4 x 1.5mm. While 15 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2v of maximum gate threshold voltage. It provides up to 8 mω maximum drain source resistance. The package is a sort of soic. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.6v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 37 nc @ 5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 3480 pf@ 25 v . Its accurate length is 5mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 51 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.5 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1.5mm. In addition, it has a typical 17 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c.

pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
IRF7455PBF Data Sheet(Technical Reference)

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FAQs

Yes. You can also search IRF7455PBF on website for other similar products.
We accept all major payment methods for all products including ET14041426. Please check your shopping cart at the time of order.
You can order Infineon brand products with IRF7455PBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRF7455PBF N-channel MOSFET, 15 A, 30 V HEXFET, 8-Pin SOIC. You can also check on our website or by contacting our customer support team for further order details on Infineon IRF7455PBF N-channel MOSFET, 15 A, 30 V HEXFET, 8-Pin SOIC.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14041426 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14041426.
Yes. We ship IRF7455PBF Internationally to many countries around the world.