Infineon IRF7329TRPBF Dual P-channel MOSFET, 9.2 A, 12 V HEXFET, 8-Pin SOIC

Infineon

Product Information

Automotive Standard:
No
Maximum Power Dissipation Pd:
2W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
-12V
Typical Gate Charge Qg @ Vgs:
8.1nC
Series:
HEXFET
Maximum Gate Source Voltage Vgs:
±8 V
Forward Voltage Vf:
-1.2V
Height:
1.75mm
Width:
4 mm
Length:
5mm
Package Type:
SO-8
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
199mΩ
Standards/Approvals:
RoHS Compliant
Maximum Continuous Drain Current Id:
-7.4A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
8
RoHs Compliant
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This is Dual P-channel MOSFET 9.2 A 12 V HEXFET 8-Pin SOIC manufactured by Infineon. The manufacturer part number is IRF7329TRPBF. The product complies with automotive standard - no. mosfet is a versatile product designed to provide user-defined applications. The product hexfet, is a highly preferred choice for users. In addition, the height is 1.75mm. Furthermore, the product is 4 mm wide. Its accurate length is 5mm. The package is a sort of so-8. Whereas, the minimum operating temperature of the product is -55°c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of 150°c. It contains 8 pins.

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Datasheet - IRF7329TRPBF(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IRF7329TRPBF Dual P-channel MOSFET, 9.2 A, 12 V HEXFET, 8-Pin SOIC. You can also check on our website or by contacting our customer support team for further order details on Infineon IRF7329TRPBF Dual P-channel MOSFET, 9.2 A, 12 V HEXFET, 8-Pin SOIC.