Infineon IRF640NSPBF N-channel MOSFET, 18 A, 200 V HEXFET, 3-Pin D2PAK
Product Information
Maximum Continuous Drain Current:
18 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
67 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
150 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
150 mΩ
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Yes. We ship IRF640NSPBF Internationally to many countries around the world.
This is N-channel MOSFET 18 A 200 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRF640NSPBF. While 18 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 67 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 150 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 150 mω maximum drain source resistance.
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