Vishay SIHF640L-GE3 N-channel MOSFET, 18 A, 200 V, 3-Pin I2PAK
Product Information
Maximum Drain Source Voltage:
200 V
Typical Gate Charge @ Vgs:
70 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
130 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
11.3mm
Width:
4.83mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
2V
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
18 A
Transistor Material:
Si
Maximum Drain Source Resistance:
180 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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FAQs
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You can order Vishay brand products with SIHF640L-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay SIHF640L-GE3 N-channel MOSFET, 18 A, 200 V, 3-Pin I2PAK. You can also check on our website or by contacting our customer support team for further order details on Vishay SIHF640L-GE3 N-channel MOSFET, 18 A, 200 V, 3-Pin I2PAK.
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Yes. We ship SIHF640L-GE3 Internationally to many countries around the world.
This is N-channel MOSFET 18 A 200 V 3-Pin I2PAK manufactured by Vishay. The manufacturer part number is SIHF640L-GE3. It has a maximum of 200 v drain source voltage. With a typical gate charge at Vgs includes 70 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 130 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 11.3mm. Furthermore, the product is 4.83mm wide. Its accurate length is 10.67mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of i2pak (to-262). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 18 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 180 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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