Enrgtech

Deliver to

United Kingdom

Categories

Brands

Part Numbers

Top Products

0

Vishay SIA449DJ-T1-GE3 P-channel MOSFET, 10.4 A, 30 V TrenchFET, 6-Pin SOT-363 (SC-70)

SIA449DJ-T1-GE3 Vishay  P-channel MOSFET, 10.4 A, 30 V TrenchFET, 6-Pin SOT-363 (SC-70)
Vishay

Product Information

Maximum Continuous Drain Current:
10.4 A
Transistor Material:
Si
Width:
2.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-363
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
48 nC @ 10 V
Channel Type:
P
Length:
2.15mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
19 W
Series:
TrenchFET
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.8mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
38 mΩ
RoHs Compliant
Checking for live stock

This is P-channel MOSFET 10.4 A 30 V TrenchFET 6-Pin SOT-363 (SC-70) manufactured by Vishay. The manufacturer part number is SIA449DJ-T1-GE3. While 10.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.15mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of sot-363. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.6v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 48 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 2.15mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 19 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.8mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 38 mω maximum drain source resistance.

pdf icon
SiA449DJ, P-Channel 30V (D-S) MOSFET(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search SIA449DJ-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET14031698. Please check your shopping cart at the time of order.
You can order Vishay brand products with SIA449DJ-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay SIA449DJ-T1-GE3 P-channel MOSFET, 10.4 A, 30 V TrenchFET, 6-Pin SOT-363 (SC-70). You can also check on our website or by contacting our customer support team for further order details on Vishay SIA449DJ-T1-GE3 P-channel MOSFET, 10.4 A, 30 V TrenchFET, 6-Pin SOT-363 (SC-70).
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14031698 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14031698.
Yes. We ship SIA449DJ-T1-GE3 Internationally to many countries around the world.