Category:
Power MOSFET
Dimensions:
5 x 5 x 0.95mm
Maximum Continuous Drain Current:
35 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.3V
Package Type:
SOP Advanced
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
21 nC @ 5 V, 37 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2155 pF@ 10 V
Length:
5mm
Pin Count:
8
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
45 W
Series:
U-MOSIII
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.95mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
5 mΩ
This is N-channel MOSFET 35 A 40 V U-MOSIII 8-Pin SOP Advanced manufactured by Toshiba. The manufacturer part number is TPCA8015-H(TE12L,Q). It is of power mosfet category . The given dimensions of the product include 5 x 5 x 0.95mm. While 35 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.3v of maximum gate threshold voltage. The package is a sort of sop advanced. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 21 nc @ 5 v, 37 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2155 pf@ 10 v . Its accurate length is 5mm. It contains 8 pins. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 45 w maximum power dissipation. The product u-mosiii, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.95mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 5 mω maximum drain source resistance.
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