Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
2.9 nC @ 10 V, 3.5 nC @ 50 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.36 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
1.5mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
1.45 Ω, 900 mΩ
Package Type:
SOIC
Number of Elements per Chip:
4
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1 A, 850 mA
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Full Bridge
This is Diodes Inc Quad N/P-channel MOSFET 1 A 850 mA 100 V 8-Pin SOIC manufactured by DiodesZetex. The manufacturer part number is ZXMHC10A07N8TC. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 2.9 nc @ 10 v, 3.5 nc @ 50 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.36 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 1.5mm. Furthermore, the product is 4mm wide. Its accurate length is 5mm. It provides up to 1.45 ω, 900 mω maximum drain source resistance. The package is a sort of soic. It consists of 4 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1 a, 850 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers full bridge transistor configuration.
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