Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
12.4 nC @ 5 V, 44 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Width:
4mm
Length:
5mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.8 A, 5.1 A
Transistor Material:
Si
Maximum Drain Source Resistance:
70 mΩ, 80 mΩ
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
This is Diodes Inc Dual N/P-channel MOSFET 4.8 A 5.1 A 60 V 8-Pin SOIC manufactured by DiodesZetex. The manufacturer part number is ZXMC6A09DN8TA. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 12.4 nc @ 5 v, 44 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.1 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Furthermore, the product is 4mm wide. Its accurate length is 5mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of soic. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 4.8 a, 5.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 70 mω, 80 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers isolated transistor configuration.
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