Diodes Inc DMP213DUFA-7B P-channel MOSFET, 166 A, 25 V, 3-Pin X2-DFN0806
Product Information
Maximum Continuous Drain Current:
166 A
Transistor Material:
Si
Width:
0.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Maximum Gate Threshold Voltage:
1.5V
Package Type:
X2-DFN0806
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.65V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.35 nC @ 4.5 V
Channel Type:
P
Length:
0.65mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
360 mW
Maximum Gate Source Voltage:
+8 V
Height:
0.35mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
13 Ω
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This is Diodes Inc P-channel MOSFET 166 A 25 V 3-Pin X2-DFN0806 manufactured by DiodesZetex. The manufacturer part number is DMP213DUFA-7B. While 166 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 0.85mm wide. The product offers single transistor configuration. It has a maximum of 25 v drain source voltage. The product carries 1.5v of maximum gate threshold voltage. The package is a sort of x2-dfn0806. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.65v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.35 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 0.65mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 360 mw maximum power dissipation. It features a maximum gate source voltage of +8 v. In addition, the height is 0.35mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 13 ω maximum drain source resistance.
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