Diodes Inc DMN65D8LDW-7 Dual N-channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363

DiodesZetex

Product Information

Forward Voltage Vf:
0.8V
Width:
1.35 mm
Automotive Standard:
AEC-Q101, AEC-Q200, AEC-Q100
Transistor Configuration:
Isolated
Typical Gate Charge Qg @ Vgs:
0.43nC
Package Type:
SC-88
Number of Elements per Chip:
2
Maximum Continuous Drain Current Id:
200mA
Product Type:
Power MOSFET
Maximum Operating Temperature:
-55°C
Maximum Drain Source Voltage Vds:
60V
Channel Type:
Type N
Length:
2.2mm
Standards/Approvals:
RoHS, UL 94V-0, MIL-STD-202, AEC-Q101, J-STD-020
Pin Count:
6
Mount Type:
Surface
Maximum Power Dissipation Pd:
400mW
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Drain Source Resistance Rds:
Height:
1mm
Minimum Operating Temperature:
150°C
RoHs Compliant
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This is Diodes Inc Dual N-channel MOSFET 200 mA 60 V 6-Pin SOT-363 manufactured by DiodesZetex. The manufacturer part number is DMN65D8LDW-7. Furthermore, the product is 1.35 mm wide. The product complies with automotive standard - aec-q101, aec-q200, aec-q100. The product offers isolated transistor configuration. The package is a sort of sc-88. It consists of 2 elements per chip. power mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of -55°c. The product is available in [Cannel Type] channel. Its accurate length is 2.2mm. It contains 6 pins. It has a surface type mount . The product carries enhancement channel mode. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is 150°c.

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ESD Control Selection Guide V1(Technical Reference)
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DMN65D8LDW-7 Dual N-Channel Enhancement Mode MOSFET Data Sheet(Technical Reference)

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