Diodes Inc DMG6402LDM-7 N-channel MOSFET, 5.3 A, 30 V, 6-Pin SOT-26
Product Information
Maximum Continuous Drain Current:
5.3 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2V
Package Type:
SOT-26
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9.2 nC @ 10 V
Channel Type:
N
Length:
3.1mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.12 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.3mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
40 mΩ
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This is Diodes Inc N-channel MOSFET 5.3 A 30 V 6-Pin SOT-26 manufactured by DiodesZetex. The manufacturer part number is DMG6402LDM-7. While 5.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of sot-26. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 9.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.1mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.12 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.3mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 40 mω maximum drain source resistance.
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