Toshiba TK12P60W,RVQ(S N-channel MOSFET, 11.5 A, 600 V TK, 3-Pin DPAK
Product Information
Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
25 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
100 W
Series:
TK
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
3.7V
Height:
2.3mm
Width:
6.1mm
Length:
6.6mm
Maximum Drain Source Resistance:
340 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
11.5 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship TK12P60W,RVQ(S Internationally to many countries around the world.
This is N-channel MOSFET 11.5 A 600 V TK 3-Pin DPAK manufactured by Toshiba. The manufacturer part number is TK12P60W,RVQ(S. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 25 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 100 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.7v of maximum gate threshold voltage. In addition, the height is 2.3mm. Furthermore, the product is 6.1mm wide. Its accurate length is 6.6mm. It provides up to 340 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 11.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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