Infineon IRLP3034PBF N-channel MOSFET, 327 A, 40 V HEXFET, 3-Pin TO-247AC
Product Information
Maximum Continuous Drain Current:
327 A
Transistor Material:
Si
Width:
5.31mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
TO-247AC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
108 nC @ 4.5 V
Channel Type:
N
Length:
15.87mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
341 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
20.7mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2 mΩ
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This is N-channel MOSFET 327 A 40 V HEXFET 3-Pin TO-247AC manufactured by Infineon. The manufacturer part number is IRLP3034PBF. While 327 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.31mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of to-247ac. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 108 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 15.87mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 341 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 20.7mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 2 mω maximum drain source resistance.
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