Category:
Power MOSFET
Dimensions:
2.1 x 2.1 x 0.95mm
Maximum Continuous Drain Current:
7.6 A
Transistor Material:
Si
Width:
2.1mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.1V
Maximum Drain Source Resistance:
82 mΩ
Package Type:
PQFN
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.8 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
270 pF @ 25 V
Length:
2.1mm
Pin Count:
6
Forward Transconductance:
8.8S
Typical Turn-Off Delay Time:
11 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
6.6 W
Series:
HEXFET
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.95mm
Typical Turn-On Delay Time:
4.4 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
