Infineon IRFB31N20DPBF N-channel MOSFET, 31 A, 200 V HEXFET, 3-Pin TO-220AB
Product Information
Maximum Continuous Drain Current:
31 A
Transistor Material:
Si
Width:
4.69mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
5.5V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
70 nC @ 10 V
Channel Type:
N
Length:
10.54mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Series:
HEXFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.24mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
82 mΩ
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This is N-channel MOSFET 31 A 200 V HEXFET 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRFB31N20DPBF. While 31 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.69mm wide. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The product carries 5.5v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 70 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.54mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 200 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 15.24mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 82 mω maximum drain source resistance.
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