Infineon AUIRF3805L N-channel MOSFET, 210 A, 55 V HEXFET, 3-Pin I2PAK
Product Information
Maximum Continuous Drain Current:
210 A
Transistor Material:
Si
Width:
4.82mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
4V
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
190 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
11.3mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.3 mΩ
Checking for live stock
FAQs
Yes. You can also search AUIRF3805L on website for other similar products.
We accept all major payment methods for all products including ET13987455. Please check your shopping cart at the time of order.
You can order Infineon brand products with AUIRF3805L directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon AUIRF3805L N-channel MOSFET, 210 A, 55 V HEXFET, 3-Pin I2PAK. You can also check on our website or by contacting our customer support team for further order details on Infineon AUIRF3805L N-channel MOSFET, 210 A, 55 V HEXFET, 3-Pin I2PAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13987455 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13987455.
Yes. We ship AUIRF3805L Internationally to many countries around the world.
This is N-channel MOSFET 210 A 55 V HEXFET 3-Pin I2PAK manufactured by Infineon. The manufacturer part number is AUIRF3805L. While 210 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.82mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of i2pak (to-262). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 190 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 300 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 11.3mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3.3 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.