Vishay SUD23N06-31-GE3 N-channel MOSFET, 23 A, 60 V, 3-Pin TO-252
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
11 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Minimum Gate Threshold Voltage:
1V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
23 A
Transistor Material:
Si
Maximum Drain Source Resistance:
31 mΩ
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Checking for live stock
FAQs
Yes. You can also search SUD23N06-31-GE3 on website for other similar products.
We accept all major payment methods for all products including ET13977479. Please check your shopping cart at the time of order.
You can order Vishay brand products with SUD23N06-31-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay SUD23N06-31-GE3 N-channel MOSFET, 23 A, 60 V, 3-Pin TO-252. You can also check on our website or by contacting our customer support team for further order details on Vishay SUD23N06-31-GE3 N-channel MOSFET, 23 A, 60 V, 3-Pin TO-252.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13977479 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13977479.
Yes. We ship SUD23N06-31-GE3 Internationally to many countries around the world.
This is N-channel MOSFET 23 A 60 V 3-Pin TO-252 manufactured by Vishay. The manufacturer part number is SUD23N06-31-GE3. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 11 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.38mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 23 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 31 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
Reviews
Don’t hesitate to ask questions for better clarification.