Vishay SIRA02DP-T1-GE3 N-channel MOSFET, 50 A, 30 V TrenchFET, 8-Pin PowerPAK SO
Product Information
Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Width:
5.26mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
PowerPAK SO
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
78 nC @ 10 V
Channel Type:
N
Length:
6.25mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
71.4 W
Series:
TrenchFET
Maximum Gate Source Voltage:
-16 V, +20 V
Height:
1.12mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.7 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay SIRA02DP-T1-GE3 N-channel MOSFET, 50 A, 30 V TrenchFET, 8-Pin PowerPAK SO. You can also check on our website or by contacting our customer support team for further order details on Vishay SIRA02DP-T1-GE3 N-channel MOSFET, 50 A, 30 V TrenchFET, 8-Pin PowerPAK SO.
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Yes. We ship SIRA02DP-T1-GE3 Internationally to many countries around the world.
This is N-channel MOSFET 50 A 30 V TrenchFET 8-Pin PowerPAK SO manufactured by Vishay. The manufacturer part number is SIRA02DP-T1-GE3. While 50 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.26mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of powerpak so. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 78 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.25mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 71.4 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +20 v. In addition, the height is 1.12mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 2.7 mω maximum drain source resistance.
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