Deliver to
United Kingdom
This is N-channel MOSFET 600 mA 200 V 4-Pin HVMDIP manufactured by Vishay. The manufacturer part number is IRFD210PBF. It has a maximum of 200 v drain source voltage. With a typical gate charge at Vgs includes 8.2 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 1 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 3.37mm. Furthermore, the product is 6.29mm wide. Its accurate length is 5mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of hvmdip. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 600 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 1.5 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 4 pins. The product offers single transistor configuration.
For more information please check the datasheets.
Basket Total:
£ 0
