Magnatec 2N6796 N-channel MOSFET, 8 A, 100 V, 3-Pin TO-39
Product Information
Maximum Drain Source Voltage:
100 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
25 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Channel Type:
N
Width:
9.4mm
Length:
9.4mm
Maximum Drain Source Resistance:
180 mΩ
Package Type:
TO-39
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Height:
4.57mm
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Checking for live stock
FAQs
Yes. You can also search 2N6796 on website for other similar products.
We accept all major payment methods for all products including ET13964233. Please check your shopping cart at the time of order.
You can order Magnatec brand products with 2N6796 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Magnatec 2N6796 N-channel MOSFET, 8 A, 100 V, 3-Pin TO-39. You can also check on our website or by contacting our customer support team for further order details on Magnatec 2N6796 N-channel MOSFET, 8 A, 100 V, 3-Pin TO-39.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13964233 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Magnatec" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13964233.
Yes. We ship 2N6796 Internationally to many countries around the world.
This is N-channel MOSFET 8 A 100 V 3-Pin TO-39 manufactured by Magnatec. The manufacturer part number is 2N6796. It has a maximum of 100 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 25 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 9.4mm wide. Its accurate length is 9.4mm. It provides up to 180 mω maximum drain source resistance. The package is a sort of to-39. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. In addition, the height is 4.57mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
Reviews
Don’t hesitate to ask questions for better clarification.