Forward Voltage Vf:
-0.85V
Width:
4 mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Isolated
Typical Gate Charge Qg @ Vgs:
44nC
Package Type:
SOIC
Number of Elements per Chip:
2
Maximum Continuous Drain Current Id:
4.8A
Product Type:
Power MOSFET
Maximum Operating Temperature:
-55°C
Maximum Drain Source Voltage Vds:
60V
Channel Type:
Type P
Length:
5mm
Standards/Approvals:
RoHS, UL 94V-0, MIL-STD-202, AEC-Q101, J-STD-020
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
2.1W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Drain Source Resistance Rds:
80mΩ
Height:
1.5mm
Minimum Operating Temperature:
150°C
