Forward Voltage Vf:
0.85V
Width:
4 mm
Automotive Standard:
No
Transistor Configuration:
Isolated
Typical Gate Charge Qg @ Vgs:
17.5nC
Package Type:
SOIC
Number of Elements per Chip:
2
Maximum Continuous Drain Current Id:
6.4A
Product Type:
Power MOSFET
Maximum Operating Temperature:
-55°C
Maximum Drain Source Voltage Vds:
30V
Channel Type:
Type P, Type N
Length:
5mm
Standards/Approvals:
RoHS, J-STD-020, UL 94V-0, AEC-Q101, MIL-STD-202
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
2.1W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Drain Source Resistance Rds:
50mΩ
Height:
1.5mm
Minimum Operating Temperature:
150°C
