Diodes Inc DMP31D0UFB4-7B P-channel MOSFET, 760 mA, 30 V, 3-Pin X2-DFN1006
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
1.5 nC @ 8 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
920 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1.1V
Height:
0.35mm
Width:
0.675mm
Length:
1.08mm
Maximum Drain Source Resistance:
2 Ω
Package Type:
X2-DFN1006
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
760 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is Diodes Inc P-channel MOSFET 760 mA 30 V 3-Pin X2-DFN1006 manufactured by DiodesZetex. The manufacturer part number is DMP31D0UFB4-7B. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 1.5 nc @ 8 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 920 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1.1v of maximum gate threshold voltage. In addition, the height is 0.35mm. Furthermore, the product is 0.675mm wide. Its accurate length is 1.08mm. It provides up to 2 ω maximum drain source resistance. The package is a sort of x2-dfn1006. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 760 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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