Diodes Inc DMN6070SSD-13 Dual N-channel MOSFET, 4.1 A, 60 V, 8-Pin SOIC
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
12.3 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
1.5mm
Width:
3.95mm
Length:
4.95mm
Maximum Drain Source Resistance:
100 mΩ
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.1 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
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FAQs
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You can order DiodesZetex brand products with DMN6070SSD-13 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Diodes Inc DMN6070SSD-13 Dual N-channel MOSFET, 4.1 A, 60 V, 8-Pin SOIC. You can also check on our website or by contacting our customer support team for further order details on Diodes Inc DMN6070SSD-13 Dual N-channel MOSFET, 4.1 A, 60 V, 8-Pin SOIC.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13950642 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "DiodesZetex" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13950642.
Yes. We ship DMN6070SSD-13 Internationally to many countries around the world.
This is Diodes Inc Dual N-channel MOSFET 4.1 A 60 V 8-Pin SOIC manufactured by DiodesZetex. The manufacturer part number is DMN6070SSD-13. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 12.3 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 1.5mm. Furthermore, the product is 3.95mm wide. Its accurate length is 4.95mm. It provides up to 100 mω maximum drain source resistance. The package is a sort of soic. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 4.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers isolated transistor configuration.
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