Forward Voltage Vf:
0.75V
Width:
3.95 mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Isolated
Typical Gate Charge Qg @ Vgs:
5.6nC
Package Type:
SOIC
Number of Elements per Chip:
2
Maximum Continuous Drain Current Id:
4.1A
Product Type:
Power MOSFET
Maximum Operating Temperature:
-55°C
Maximum Drain Source Voltage Vds:
60V
Channel Type:
Type N
Length:
4.95mm
Standards/Approvals:
J-STD-020, AEC-Q101, RoHS, UL 94V-0, MIL-STD-202
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
1.5W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Drain Source Resistance Rds:
100mΩ
Height:
1.5mm
Minimum Operating Temperature:
150°C
