This is Diodes Inc N-channel MOSFET 8.5 A 30 V 6-Pin TSOT-26 manufactured by DiodesZetex. The manufacturer part number is DMN3026LVT-7. While 8.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.6mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of tsot-26. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 12.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 2.9mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.9mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 30 mω maximum drain source resistance.
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This is Diodes Inc N-channel MOSFET 8.5 A 30 V 6-Pin TSOT-26 manufactured by DiodesZetex. The manufacturer part number is DMN3026LVT-7. While 8.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.6mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of tsot-26. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 12.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 2.9mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.9mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 30 mω maximum drain source resistance.
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