Diodes Inc DMG1013UW-7 P-channel MOSFET, 820 mA, 20 V, 3-Pin SOT-323

DMG1013UW-7 Diodes Inc  P-channel MOSFET, 820 mA, 20 V, 3-Pin SOT-323
DMG1013UW-7
DiodesZetex

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
0.62 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
310 mW
Maximum Gate Source Voltage:
-6 V, +6 V
Maximum Gate Threshold Voltage:
1V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Maximum Drain Source Resistance:
1.5 Ω
Package Type:
SOT-323
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
820 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc P-channel MOSFET 820 mA 20 V 3-Pin SOT-323 manufactured by DiodesZetex. The manufacturer part number is DMG1013UW-7. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 0.62 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 310 mw maximum power dissipation. It features a maximum gate source voltage of -6 v, +6 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. It provides up to 1.5 ω maximum drain source resistance. The package is a sort of sot-323. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 820 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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