Infineon IRLMS5703TRPBF P-channel MOSFET, 2.4 A, 30 V HEXFET, 6-Pin Micro6
Product Information
Maximum Continuous Drain Current:
2.4 A
Transistor Material:
Si
Width:
1.75mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1V
Package Type:
Micro6
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.2 nC @ 10 V
Channel Type:
P
Length:
3mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.7 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.3mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
325 mΩ
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Yes. We ship IRLMS5703TRPBF Internationally to many countries around the world.
This is P-channel MOSFET 2.4 A 30 V HEXFET 6-Pin Micro6 manufactured by Infineon. The manufacturer part number is IRLMS5703TRPBF. While 2.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.75mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of micro6. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 7.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.7 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.3mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 325 mω maximum drain source resistance.
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