Infineon IRFTS8342TRPBF N-channel MOSFET, 8.2 A, 30 V HEXFET, 6-Pin TSOP
Product Information
Maximum Continuous Drain Current:
8.2 A
Transistor Material:
Si
Width:
1.75mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.35V
Package Type:
TSOP-6
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.35V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.8 nC @ 4.5 V
Channel Type:
N
Length:
3mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.3mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
29 mΩ
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Yes. We ship IRFTS8342TRPBF Internationally to many countries around the world.
This is N-channel MOSFET 8.2 A 30 V HEXFET 6-Pin TSOP manufactured by Infineon. The manufacturer part number is IRFTS8342TRPBF. While 8.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.75mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.35v of maximum gate threshold voltage. The package is a sort of tsop-6. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.35v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 4.8 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.3mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 29 mω maximum drain source resistance.
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