Infineon IRFL4105TRPBF N-channel MOSFET, 5.2 A, 55 V HEXFET, 3+Tab-Pin SOT-223
Product Information
Maximum Continuous Drain Current:
5.2 A
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
4V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
23 nC @ 10 V
Channel Type:
N
Length:
6.7mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.1 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.8mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
45 mΩ
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You will get a confirmation email regarding your order of Infineon IRFL4105TRPBF N-channel MOSFET, 5.2 A, 55 V HEXFET, 3+Tab-Pin SOT-223. You can also check on our website or by contacting our customer support team for further order details on Infineon IRFL4105TRPBF N-channel MOSFET, 5.2 A, 55 V HEXFET, 3+Tab-Pin SOT-223.
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Yes. We ship IRFL4105TRPBF Internationally to many countries around the world.
This is N-channel MOSFET 5.2 A 55 V HEXFET 3+Tab-Pin SOT-223 manufactured by Infineon. The manufacturer part number is IRFL4105TRPBF. While 5.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.7mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 23 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.7mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.1 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.8mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 45 mω maximum drain source resistance.
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