Infineon IRFI4321PBF N-channel MOSFET, 34 A, 150 V HEXFET, 3-Pin TO-220FP
Product Information
Maximum Continuous Drain Current:
34 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
73 nC @ 10 V
Channel Type:
N
Length:
10.63mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
46 W
Series:
HEXFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
16.12mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
16 mΩ
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Yes. We ship IRFI4321PBF Internationally to many countries around the world.
This is N-channel MOSFET 34 A 150 V HEXFET 3-Pin TO-220FP manufactured by Infineon. The manufacturer part number is IRFI4321PBF. While 34 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 150 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 73 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.63mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 46 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 16.12mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 16 mω maximum drain source resistance.
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