Infineon IRF1018EPBF N-channel MOSFET, 79 A, 60 V HEXFET, 3-Pin TO-220AB

Infineon

Product Information

Maximum Drain Source Resistance Rds:
8mΩ
Forward Voltage Vf:
1.3V
Width:
4.83 mm
Distrelec Product Id:
304-43-449
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
46nC
Package Type:
TO-220
Maximum Continuous Drain Current Id:
79A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
60V
Channel Type:
Type N
Length:
10.67mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Through Hole
Maximum Power Dissipation Pd:
110W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
HEXFET
Height:
9.02mm
Minimum Operating Temperature:
-55°C
RoHs Compliant
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This is N-channel MOSFET 79 A 60 V HEXFET 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRF1018EPBF. Furthermore, the product is 4.83 mm wide. The product complies with automotive standard - no. The package is a sort of to-220. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 175°c. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. It has a through hole type mount . The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. In addition, the height is 9.02mm. Whereas, the minimum operating temperature of the product is -55°c.

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MOSFET N-ch HEXFET 60V 79A Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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