Vishay SISS23DN-T1-GE3 P-channel MOSFET, 27 A, 20 V TrenchFET, 8-Pin PowerPAK 1212
Product Information
Maximum Continuous Drain Current:
27 A
Transistor Material:
Si
Width:
3.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
PowerPAK 1212-8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
195 nC @ 10 V
Channel Type:
P
Length:
3.3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
57 W
Series:
TrenchFET
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.78mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
11.5 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay SISS23DN-T1-GE3 P-channel MOSFET, 27 A, 20 V TrenchFET, 8-Pin PowerPAK 1212. You can also check on our website or by contacting our customer support team for further order details on Vishay SISS23DN-T1-GE3 P-channel MOSFET, 27 A, 20 V TrenchFET, 8-Pin PowerPAK 1212.
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Yes. We ship SISS23DN-T1-GE3 Internationally to many countries around the world.
This is P-channel MOSFET 27 A 20 V TrenchFET 8-Pin PowerPAK 1212 manufactured by Vishay. The manufacturer part number is SISS23DN-T1-GE3. While 27 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.3mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The package is a sort of powerpak 1212-8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 195 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.3mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 57 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 0.78mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 11.5 mω maximum drain source resistance.
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