Vishay SISS23DN-T1-GE3 P-channel MOSFET, 27 A, 20 V TrenchFET, 8-Pin PowerPAK 1212

Vishay

Product Information

Forward Voltage Vf:
-0.8V
Width:
3.3 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
195nC
Package Type:
PowerPAK 1212
Maximum Continuous Drain Current Id:
27A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
11.5mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
20V
Channel Type:
Type P
Length:
3.3mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
57W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
8 V
Series:
TrenchFET
Height:
0.78mm
Minimum Operating Temperature:
-55°C
RoHs Compliant
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This is P-channel MOSFET 27 A 20 V TrenchFET 8-Pin PowerPAK 1212 manufactured by Vishay. The manufacturer part number is SISS23DN-T1-GE3. Furthermore, the product is 3.3 mm wide. The product complies with automotive standard - no. The package is a sort of powerpak 1212. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 150°c. The product is available in [Cannel Type] channel. Its accurate length is 3.3mm. It contains 8 pins. It has a surface type mount . The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. In addition, the height is 0.78mm. Whereas, the minimum operating temperature of the product is -55°c.

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SiSS23DN, P-Channel 20V (D-S) MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of Vishay SISS23DN-T1-GE3 P-channel MOSFET, 27 A, 20 V TrenchFET, 8-Pin PowerPAK 1212. You can also check on our website or by contacting our customer support team for further order details on Vishay SISS23DN-T1-GE3 P-channel MOSFET, 27 A, 20 V TrenchFET, 8-Pin PowerPAK 1212.