Vishay SISA04DN-T1-GE3 N-channel MOSFET, 40 A, 30 V TrenchFET, 8-Pin PowerPAK 1212

Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
51 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
52 W
Series:
TrenchFET
Maximum Gate Source Voltage:
-16 V, +20 V
Height:
1.12mm
Width:
3.15mm
Length:
3.15mm
Minimum Gate Threshold Voltage:
1.1V
Package Type:
PowerPAK 1212-8
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Maximum Drain Source Resistance:
3.1 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
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This is N-channel MOSFET 40 A 30 V TrenchFET 8-Pin PowerPAK 1212 manufactured by Vishay. The manufacturer part number is SISA04DN-T1-GE3. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 51 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 52 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +20 v. In addition, the height is 1.12mm. Furthermore, the product is 3.15mm wide. Its accurate length is 3.15mm. Whereas its minimum gate threshold voltage includes 1.1v. The package is a sort of powerpak 1212-8. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 40 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 3.1 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.

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SiSA04DN, N-Channel 30 V (D-S) MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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