Vishay SIR462DP-T1-GE3 N-channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
20 nC @ 10 V, 8.8 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
4.8 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.04mm
Width:
5.89mm
Length:
4.9mm
Minimum Gate Threshold Voltage:
1V
Package Type:
PowerPAK SO-8
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
19 A
Transistor Material:
Si
Maximum Drain Source Resistance:
8 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship SIR462DP-T1-GE3 Internationally to many countries around the world.
This is N-channel MOSFET 19 A 30 V 8-Pin PowerPAK SO manufactured by Vishay. The manufacturer part number is SIR462DP-T1-GE3. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 20 nc @ 10 v, 8.8 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 4.8 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.04mm. Furthermore, the product is 5.89mm wide. Its accurate length is 4.9mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of powerpak so-8. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 19 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 8 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.
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