Vishay SiHG30N60E-GE3 N-channel MOSFET, 29 A, 600 V E Series, 3-Pin TO-247AC

Vishay

Product Information

Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
85 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 W
Series:
E Series
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
20.82mm
Width:
5.31mm
Length:
15.87mm
Minimum Gate Threshold Voltage:
2V
Package Type:
TO-247AC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
29 A
Transistor Material:
Si
Maximum Drain Source Resistance:
125 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 29 A 600 V E Series 3-Pin TO-247AC manufactured by Vishay. The manufacturer part number is SiHG30N60E-GE3. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 85 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 250 w maximum power dissipation. The product e series, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 20.82mm. Furthermore, the product is 5.31mm wide. Its accurate length is 15.87mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of to-247ac. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 29 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 125 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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SiHG30N60E, E Series Power MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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