Vishay SI8489EDB-T2-E1 P-channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT
Product Information
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
17.5 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.8 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.268mm
Width:
1mm
Length:
1mm
Minimum Gate Threshold Voltage:
0.5V
Package Type:
MICRO FOOT
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.3 A
Transistor Material:
Si
Maximum Drain Source Resistance:
82 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
Checking for live stock
FAQs
Yes. You can also search SI8489EDB-T2-E1 on website for other similar products.
We accept all major payment methods for all products including ET13923039. Please check your shopping cart at the time of order.
You can order Vishay brand products with SI8489EDB-T2-E1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay SI8489EDB-T2-E1 P-channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT. You can also check on our website or by contacting our customer support team for further order details on Vishay SI8489EDB-T2-E1 P-channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13923039 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13923039.
Yes. We ship SI8489EDB-T2-E1 Internationally to many countries around the world.
This is P-channel MOSFET 4.3 A 20 V 4-Pin MICRO FOOT manufactured by Vishay. The manufacturer part number is SI8489EDB-T2-E1. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 17.5 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.8 w maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.268mm. Furthermore, the product is 1mm wide. Its accurate length is 1mm. Whereas its minimum gate threshold voltage includes 0.5v. The package is a sort of micro foot. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 4.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 82 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 4 pins. The product offers single transistor configuration.
Reviews
Don’t hesitate to ask questions for better clarification.