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This is Dual P-channel MOSFET 3.8 A 20 V 8-Pin 1206 ChipFET manufactured by Vishay. The manufacturer part number is SI5935CDC-T1-GE3. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 7 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3.1 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product is available in [Cannel Type] channel. Furthermore, the product is 1.7mm wide. Its accurate length is 3.1mm. Whereas its minimum gate threshold voltage includes 0.4v. The package is a sort of 1206 chipfet. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 3.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 156 mω maximum drain source resistance. In addition, the height is 1.1mm. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers isolated transistor configuration.
For more information please check the datasheets.
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£ 0.000