Vishay SI4946BEY-T1-GE3 Dual N-channel MOSFET, 6.5 A, 60 V, 8-Pin SOIC

Enrgtech Part No: ET13923031
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Manufacturer Part No:
SI4946BEY-T1-GE3
|
Manufacturer: Vishay

SI4946BEY-T1-GE3 Vishay Dual N-channel MOSFET, 6.5 A, 60 V, 8-Pin SOIC

Product Information

Width:

4 mm

Maximum Drain Source Resistance Rds:

52mΩ

Automotive Standard:

Transistor Configuration:

Isolated

Typical Gate Charge Qg @ Vgs:

17nC

Package Type:

SOIC

Number of Elements per Chip:

Maximum Continuous Drain Current Id:

6.5A

Product Type:

MOSFET

Maximum Operating Temperature:

175°C

Maximum Drain Source Voltage Vds:

60V

Channel Type:

Type N

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This is Dual N-channel MOSFET 6.5 A 60 V 8-Pin SOIC manufactured by Vishay. The manufacturer part number is SI4946BEY-T1-GE3. Furthermore, the product is 4 mm wide. The product complies with automotive standard - no. The product offers isolated transistor configuration. The package is a sort of soic. It consists of 2 elements per chip. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 175°c. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. It has a surface type mount . The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. In addition, the height is 1.55mm. Whereas, the minimum operating temperature of the product is -55°c.

Si4946BEY, Dual N-Channel 60V (Drain-Source) 175degC MOSFET Data Sheet(Technical Reference)

ESD Control Selection Guide V1(Technical Reference)

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Yes. Our products in MOSFETs category are shipped in lowest possible time.

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Vishay SI4946BEY-T1-GE3 Dual N-channel MOSFET, 6.5 A, 60 V, 8-Pin SOIC

SI4946BEY-T1-GE3

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