Infineon IRFP048NPBF N-channel MOSFET, 64 A, 55 V HEXFET, 3-Pin TO-247AC
Product Information
Maximum Continuous Drain Current:
64 A
Transistor Material:
Si
Width:
5.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-247AC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
89 nC @ 10 V
Channel Type:
N
Length:
15.9mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
140 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
20.3mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
16 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship IRFP048NPBF Internationally to many countries around the world.
This is N-channel MOSFET 64 A 55 V HEXFET 3-Pin TO-247AC manufactured by Infineon. The manufacturer part number is IRFP048NPBF. While 64 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.3mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-247ac. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 89 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.9mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 140 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 20.3mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 16 mω maximum drain source resistance.
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