Vishay IRLI640GPBF N-channel MOSFET, 9.9 A, 200 V, 3-Pin TO-220FP
Product Information
Maximum Drain Source Voltage:
200 V
Typical Gate Charge @ Vgs:
66 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
40 W
Maximum Gate Source Voltage:
-10 V, +10 V
Channel Type:
N
Minimum Gate Threshold Voltage:
1V
Maximum Drain Source Resistance:
180 mΩ
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
9.9 A
Transistor Material:
Si
Height:
9.8mm
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship IRLI640GPBF Internationally to many countries around the world.
This is N-channel MOSFET 9.9 A 200 V 3-Pin TO-220FP manufactured by Vishay. The manufacturer part number is IRLI640GPBF. It has a maximum of 200 v drain source voltage. With a typical gate charge at Vgs includes 66 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 40 w maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. The product is available in [Cannel Type] channel. Whereas its minimum gate threshold voltage includes 1v. It provides up to 180 mω maximum drain source resistance. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 9.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. In addition, the height is 9.8mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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