Vishay SQJ960EP-T1_GE3 Dual N-channel MOSFET, 8 A, 60 V, 8-Pin PowerPAK SO
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
34 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.14mm
Width:
4.47mm
Length:
5.25mm
Minimum Gate Threshold Voltage:
1.5V
Package Type:
PowerPAK SO
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Maximum Drain Source Resistance:
84 mΩ
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
8
Transistor Configuration:
Isolated
Checking for live stock
FAQs
Yes. You can also search SQJ960EP-T1_GE3 on website for other similar products.
We accept all major payment methods for all products including ET13884490. Please check your shopping cart at the time of order.
You can order Vishay brand products with SQJ960EP-T1_GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay SQJ960EP-T1_GE3 Dual N-channel MOSFET, 8 A, 60 V, 8-Pin PowerPAK SO. You can also check on our website or by contacting our customer support team for further order details on Vishay SQJ960EP-T1_GE3 Dual N-channel MOSFET, 8 A, 60 V, 8-Pin PowerPAK SO.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13884490 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13884490.
Yes. We ship SQJ960EP-T1_GE3 Internationally to many countries around the world.
This is Dual N-channel MOSFET 8 A 60 V 8-Pin PowerPAK SO manufactured by Vishay. The manufacturer part number is SQJ960EP-T1_GE3. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 13 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 34 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.14mm. Furthermore, the product is 4.47mm wide. Its accurate length is 5.25mm. Whereas its minimum gate threshold voltage includes 1.5v. The package is a sort of powerpak so. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 84 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 8 pins. The product offers isolated transistor configuration.
Reviews
Don’t hesitate to ask questions for better clarification.