Vishay SI7121DN-T1-GE3 P-channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
33 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
27.8 W
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
1.07mm
Width:
3.15mm
Length:
3.15mm
Minimum Gate Threshold Voltage:
1V
Package Type:
PowerPAK 1212-8
Number of Elements per Chip:
1
Minimum Operating Temperature:
-50 °C
Maximum Continuous Drain Current:
9.6 A
Transistor Material:
Si
Maximum Drain Source Resistance:
26 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship SI7121DN-T1-GE3 Internationally to many countries around the world.
This is P-channel MOSFET 9.6 A 30 V 8-Pin PowerPAK 1212 manufactured by Vishay. The manufacturer part number is SI7121DN-T1-GE3. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 33 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 27.8 w maximum power dissipation. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 1.07mm. Furthermore, the product is 3.15mm wide. Its accurate length is 3.15mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of powerpak 1212-8. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -50 °c. While 9.6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 26 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.
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